CMA30E1600PZ single thyristor thyristor 4 1 3 part number CMA30E1600PZ backside: anode tav t vv 1.42 rrm 30 1600 = v= v i= a features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control to-263 (d2pak-hv) industry standard outline rohs compliant epoxy meets ul 94v-0 high creepage distance between terminals ixys reserves the right to change limits, conditions and dimensions. 20130118a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
CMA30E1600PZ v = v a2s a2s a2s a2s symbol definition ratings typ. max. i v i a v t 1.42 r 0.5 k/w min. 30 v v 10 t = 25c vj t = c vj ma 2 v = v t = 25c vj i = a t v t = c c 115 p tot 250 w t = 25c c 30 1600 forward voltage drop total power dissipation conditions unit 1.80 t = 25c vj 125 v t0 v 0.90 t = c vj 150 r t 17 m ? v 1.42 t = c vj i = a t v 30 1.92 i = a 60 i = a 60 threshold voltage slope resistance for power loss calculation only a 125 v v 1600 t = 25c vj i a 47 p gm w t = 30 s 10 max. gate power dissipation p t = c c 150 w t = 5 p p gav w 0.5 average gate power dissipation c j 13 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 150 260 280 240 240 a a a a 220 240 340 325 1600 300 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 150 repetitive, i = t vj = 125c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v= 6 v t = c 25 (dv/dt) t=125c critical rate of rise of voltage a/s 500 v/s t = s; ia;v = ? v r = ; method 1 (linear voltage rise) vj d vj 90 a t p g =0.2 di /dt a/s; g =0.2 d drm cr v = ? v d drm gk 500 1.3 v t= c -40 vj i gt gate trigger current v= 6 v t = c 25 d vj 28 ma t= c -40 vj 1.6 v 50 ma v gd gate non-trigger voltage t= c vj 0.2 v i gd gate non-trigger current 1ma v = ? v d drm 150 latching current t= c vj 90 ma i l 25 ts p =10 ia; g = 0.2 di /dt a/s g =0.2 holding current t= c vj 60 ma i h 25 v= 6 v d r = gk gate controlled delay time t= c vj 2s t gd 25 ia; g = 0.5 di /dt a/s g =0.5 v = ? v d drm turn-off time t= c vj 150 s t q di/dt = a/s; 10 dv/dt = v/s; 20 v = r 100 v; i a; t =30 v = ? v d drm t s p = 200 non-repet., i = 30 a t 150 r thch thermal resistance case to heatsink k/w thyristor 1700 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage r/d reverse current, drain current t t r/d r/d 200 0.25 ixys reserves the right to change limits, conditions and dimensions. 20130118a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
CMA30E1600PZ ratings product m a r k i n g date code part no. logo assembly code xxxxxxxxx ixys yyww z 000000 assembly line c m a 30 e 1600 pz part number thyristor (scr) thyristor (up to 1800v) single thyristor to-263ab (d2pak) (2hv) = = = current rating [a] reverse voltage [v] = = = = package t vj c t stg c 150 storage temperature -55 weight g 1.5 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 60 mounting force with clip 20 mm mm 4.2 4.9 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 35 a per terminal 150 -40 terminal to terminal to-263 ( d2pak-hv ) delivery mode quantity code no. part number marking on product ordering CMA30E1600PZ 513695 tape & reel 800 CMA30E1600PZ standard threshold voltage v 0.9 m ? v 0 max r 0 max slope resistance * 14 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 150c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130118a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
CMA30E1600PZ w c2 a a1 c l a2 2x b2 e1 2x b h d1 supplier option 4 d2 e 2x e l1 d 3 1 e1 min max min max a 4.06 4.83 0.160 0.190 a1 a2 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 d 8.38 9.40 0.330 0.370 d1 8.00 8.89 0.315 0.350 d2 e 9.65 10.41 0.380 0.410 e1 6.22 8.50 0.245 0.335 e e1 h 14.61 15.88 0.575 0.625 l 1.78 2.79 0.070 0.110 l1 1.02 1.68 0.040 0.066 w typ. 0.02 0.040 typ. 0.0008 0.002 dim. millimeter inches typ. 0.10 typ. 0.004 2.41 0.095 0.098 4.28 0.169 all dimensions conform with and/or within jedec standard. 2,54 bsc 0,100 bsc 2.5 4 1 3 outlines to-263 (d2pak-hv) ixys reserves the right to change limits, conditions and dimensions. 20130118a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
CMA30E1600PZ 04080120160 0 10 20 30 40 0.01 0.1 1 100 150 200 250 0.51.01.52.0 0 10 20 30 40 50 60 1 10 100 1000 10000 0.0 0.2 0.4 0.6 i t [a] t[s] v t [v] 234567890 1 1 10 100 1000 i 2 t [a 2 s] t[ms] i tsm [a] t vj = 25c t vj =125c t vj =45c 50 hz, 80% v rrm t vj = 125c t vj = 45c v r =0 v i tavm [a] t case [c] z thjc [k/w] t[ms] fig. 1 forward characteristics fig. 2 surge overload current i tsm : crest value, t: duration fig. 3 i 2 t versus time (1-10 s) fig. 4 gate voltage & gate current triggering: a = no; b = possible; c = safe fig. 6 max. forward current at case temperature fig. 7 transient thermal impedance junction to case fig. 5 gate controlled delay time t gd 0 10203040 0 20 40 60 i f(av) [a] p (av) [w] fig. 7a power dissipation versus direct output current fig. 7b and ambient temperature 0 50 100 150 t amb [c] r thha 0.6 0.8 1.0 2.0 4.0 8.0 dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 150c ir thi (k/w) t i (s) 10.08 0.01 2 0.06 0.0001 30.2 0.02 40.05 0.2 50.11 0.11 0255075 0 1 2 3 4 v g [v] i g [ma] i gd : t vj =125c i gd :t vj =25c i gd :t vj =25c i gd :t vj =0c i gd :t vj =-40c -2 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 t gd [ s] i g [a] lim. typ. t vj =125c thyristor ixys reserves the right to change limits, conditions and dimensions. 20130118a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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